The energy structure of a semiconductor can be altered by substituting one type of atom with another (doping). Semiconductor n-type doping creates and fills new energy levels just below the conduction...The energy structure of a semiconductor can be altered by substituting one type of atom with another (doping). Semiconductor n-type doping creates and fills new energy levels just below the conduction band. Semiconductor p-type doping creates new energy levels just above the valence band. The Hall effect can be used to determine charge, drift velocity, and charge carrier number density of a semiconductor.
The energy structure of a semiconductor can be altered by substituting one type of atom with another (doping). Semiconductor n-type doping creates and fills new energy levels just below the conduction...The energy structure of a semiconductor can be altered by substituting one type of atom with another (doping). Semiconductor n-type doping creates and fills new energy levels just below the conduction band. Semiconductor p-type doping creates new energy levels just above the valence band. The Hall effect can be used to determine charge, drift velocity, and charge carrier number density of a semiconductor.
