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- https://phys.libretexts.org/Courses/Kettering_University/Electricity_and_Magnetism_with_Applications_to_Amateur_Radio_and_Wireless_Technology/14%3A_Introduction_to_Semiconductor_Devices/14.08%3A_Bipolar_Junction_TransistorsThe bipolar junction transistor (BJT) was named because its operation involves conduction by two carriers: electrons and holes in the same crystal. The first bipolar transistor was invented at Bell La...The bipolar junction transistor (BJT) was named because its operation involves conduction by two carriers: electrons and holes in the same crystal. The first bipolar transistor was invented at Bell Labs by William Shockley, Walter Brattain, and John Bardeen so late in 1947 that it was not published until 1948. Thus, many texts differ as to the date of invention. Brattain fabricated a germanium point contact transistor, bearing some resemblance to a point contact diode. Within a month, Shockley h
- https://phys.libretexts.org/Courses/Kettering_University/Electricity_and_Magnetism_with_Applications_to_Amateur_Radio_and_Wireless_Technology/14%3A_Introduction_to_Semiconductor_Devices/14.09%3A_Junction_Field-effect_TransistorsThe field effect transistor was proposed by Julius Lilienfeld in US patents in 1926 and 1933 (1,900,018). Moreover, Shockley, Brattain, and Bardeen were investigating the field effect transistor in 19...The field effect transistor was proposed by Julius Lilienfeld in US patents in 1926 and 1933 (1,900,018). Moreover, Shockley, Brattain, and Bardeen were investigating the field effect transistor in 1947. Though, the extreme difficulties sidetracked them into inventing the bipolar transistor instead. Shockley’s field effect transistor theory was published in 1952. However, the materials processing technology was not mature enough until 1960 when John Atalla produced a working device.
- https://phys.libretexts.org/Courses/Kettering_University/Electricity_and_Magnetism_with_Applications_to_Amateur_Radio_and_Wireless_Technology/14%3A_Introduction_to_Semiconductor_Devices/14.05%3A_Junction_DiodesThere were some historic crude, but usable were some historic crude, but usable semiconductor rectifiers before high purity materials were available. Ferdinand Braun invented a lead sulfide, PbS, base...There were some historic crude, but usable were some historic crude, but usable semiconductor rectifiers before high purity materials were available. Ferdinand Braun invented a lead sulfide, PbS, based point contact rectifier in 1874. Cuprous oxide rectifiers were used as power rectifiers in 1924. The forward voltage drop is 0.2 V. The linear characteristic curve perhaps is why Cu2O was used as a rectifier for the AC scale on D’Arsonval based multimeters. This diode is also photosensitive.
